半导体学报2008，Vol.29Issue(3)：438-441,4.
电场对半导体GaAs量子阱中束缚磁极化子性质的影响
Influence of the Electric Field on the Properties of the Bound Magnetopolaron in GaAs Semiconductor Quantum Wells
摘要
Abstract
The influence of the electric field on the properties of the bound magnetopolaron in an infinite-depth GaAs semiconductor quantum well is investigated using the linear-combination operator and the unitary transformation method. The relationships between the polaron's ground state energy and the Coulomb bound potential, electric field, magnetic field, and well-width are derived and discussed. Our numerical results show that the absolute value of the polaron's ground state energy 'increases as the electric field and the Coulomb bound potential increase, and decreases as the well-width and the magnetic field strength increase. When the well-width is small,the quantum size effect is significant.关键词
量子阱/束缚磁极化子/线性组合算符/基态能量Key words
quantum well/ bound magnetopolaron/ linear combination operator/ ground state energy分类
信息技术与安全科学引用本文复制引用
单淑萍,肖景林..电场对半导体GaAs量子阱中束缚磁极化子性质的影响[J].半导体学报,2008,29(3):438-441,4.基金项目
国家自然科学基金资助项目(批准号:10347004) Project supported by the National Natural Science Foundation of China (No.10347004) （批准号:10347004）
