半导体学报2001，Vol.22Issue(4)：446-450,5.
半导体/超晶格分布布拉格反射镜(DBR) 的
分子束外延生长
Semiconductor/Superlattice Distributed Bragg Reflector Grown
by Molecular Beam Epitaxy
晏长岭 1赵英杰 2钟景昌2
作者信息
- 1. 中国科学院长春光学精密机械物理研究所,
- 2. 长春光学精密机械学院
- 折叠
摘要
Abstract
By replacing the AlxGa1-xAs with GaAs/AlAs superlattice,the p type semiconductor/superlattice distributed Bragg reflector(DBR) has been grown by molecular beam epitaxy (MBE)．The center wavelength of the DBR reflection spectrum is about 850nm;and the 19-period DBR has the high reflectivity of 99.5%．Using twice self-designed tungsten filament mask and proton implantation method，we fabricate a square current flowing area size of 15μm×15μm with which the series resistance of the p type DBR is measured about 50 Ohm.Therefore,the semiconductor/superlattice DBR has proved to be of low series resistance and high reflectivity,which applies to the optoelectronic devices such as vertical-cavity surface-emitting lasers (VCSEL's)，which need high optical feed back and low power consumption.Dwing to the omission of the interface structures between two semiconductor heterointerfaces for the purpose of decreasing the series resistance in DBR,the structure and the fabrication of the DBR are simplified and successfully applied in the optoelectronic devices with complicated structure．In this method the depth of implantation is controllable;and the side etching happened in wet chemical etching is avoided．In the process of growth,the MBE system with a single Al source is found to be of less growth time with this kind of semiconductor/superlattice DBR,so it is suitable for the optoelectronic devices with multiple-layer structures．关键词
分布布拉格反射镜(DBR)/超晶格/分子束外延(MBE)/反射谱/串联电阻分类
信息技术与安全科学引用本文复制引用
晏长岭,赵英杰,钟景昌..半导体/超晶格分布布拉格反射镜(DBR) 的
分子束外延生长[J].半导体学报,2001,22(4):446-450,5.
