半导体学报2001，Vol.22Issue(4)：451-455,5.
Pt层对Ni/Si(100)固相反应NiSi薄膜高温稳定性的增强效应
Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) System
摘要
Abstract
The solid phase silicidation has been studied，which occurs in the thin films of Ni/Pt and Pt/Ni sputtered sequentially on Si(100) substrate．The results show that the phase transformation from NiSi to NiSi2 is delayed by the addition of 1nm Pt to the Ni/Si system as a capping- or an inter-layer,and the phase transformation temperature has increased．As to the bilayered thin film system,XRD spectra indicate that there exists no NiSi2 phase after annealing at 800℃,but some diffraction peaks corresponding to NiSi after annealing at 850℃．Annealed at 800℃ the film has a relative low resistance of 23—25μΩ*cm．Compared with the NiSi film obtained by direct reaction of Ni with Si substrate,the thermal stability of the above-mentioned film is increased by about 100℃ above，which favors the application of NiSi in the fabrication of Si-based devices．关键词
热稳定性/金属硅化物/相变分类
信息技术与安全科学引用本文复制引用
韩永召,李炳宗,屈新萍,茹国平..Pt层对Ni/Si(100)固相反应NiSi薄膜高温稳定性的增强效应[J].半导体学报,2001,22(4):451-455,5.
