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电化学沉积Cu-In-Se薄膜

敖建平 孙国忠 夏晓丽

中山大学学报(自然科学版)2003,Vol.42Issue(z1):45-46,2.
中山大学学报(自然科学版)2003,Vol.42Issue(z1):45-46,2.

电化学沉积Cu-In-Se薄膜

Electrochemical Deposition of Cu-In-Se Thin Films

敖建平 1孙国忠 1夏晓丽1

作者信息

  • 1. 南昌航空工业学院材料系,江西,南昌,330034
  • 折叠

摘要

Abstract

Cu-Se, In-Se and Cu-In-Se thin films have been prepared by electrodepositing method on molybdenum substrates. This paper measures parameter of the electrodeposition process, and discovers the Cu-In-Se thin films are induced codeposition. The Cu-In-Se is not stoichiometric ratio, but is provided with photoelectricity property.

关键词

电沉积/CuInSe2/诱导共沉积

Key words

electrodeposition/CuInSe2/induced codeposition

分类

能源科技

引用本文复制引用

敖建平,孙国忠,夏晓丽..电化学沉积Cu-In-Se薄膜[J].中山大学学报(自然科学版),2003,42(z1):45-46,2.

基金项目

This project is supported by JiangXi Provincial Natural Science Foundation of China. ()

中山大学学报(自然科学版)

OA北大核心CSCDCSTPCD

0529-6579

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