半导体学报2008，Vol.29Issue(3)：458-460,3.
4H-SiC MESFET肖特基栅接触的界面参数提取
A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs
摘要
Abstract
We investigate the effects of the surface states on the Schottky contacts in 4H-SiC MESFET. The Ti/Pt/Au gate metal contacts are deposited by electron beam evaporation and patterned by a lift-off process. Based on thermionic theo- ry,a simple parameter extraction method is developed for determination of the surface states in metal/4H-SiC Schottky contacts. The interface state density and interface capacitance are calculated to be 4.386×1013 cm-2·eV-1 and 6. 394× 10-6F/cm2 ,which are consistent with the device's terminal characteristics.关键词
碳化硅/肖特基接触/表面态/器件模型Key words
silicon carbide/ Schottky contact/ surface states/ device modeling.分类
电子信息工程引用本文复制引用
吕红亮,张义门,张玉明,车勇,孙明..4H-SiC MESFET肖特基栅接触的界面参数提取[J].半导体学报,2008,29(3):458-460,3.基金项目
国家自然科学基金资助项目(批准号:60606022) Project supported by the National Natural Science Foundation of China (No. 60606022) （批准号:60606022）
