半导体学报2002，Vol.23Issue(5)：459-463,5.
选择外延MOCVD研制DFB激光器和模斑转换器集成器件
Spotsize Converter Integrated DFB Laser Diode Using Selective Area Growth of MOCVD
邱伟彬 1王圩 1董杰 1张静媛 1周帆1
作者信息
- 1. 中国科学院半导体研究所,光电子工艺中心,北京,100083
- 折叠
摘要
Abstract
The characteristics of thickness enhancement factor and bandgap wavelength of selectively grown InGaAsP are investigated.A high thickness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The tolerance of 1dBm misalignment is 3.4μm vertically.关键词
选择外延/对接/模斑转换器/DFB激光器Key words
SAG/butt-joint/spotsize converter/DFB分类
信息技术与安全科学引用本文复制引用
邱伟彬,王圩,董杰,张静媛,周帆..选择外延MOCVD研制DFB激光器和模斑转换器集成器件[J].半导体学报,2002,23(5):459-463,5.
