半导体学报2001，Vol.22Issue(4)：460-464,5.
微波晶体管散射矩阵的数值计算
Numerical Algorithm of Scatter Parameters of Microwave Transistor
齐臣杰 1吴国华 2王晓慧 1李国辉 3黄敞3
作者信息
- 1. 清华大学微电子所,
- 2. 浙江大学生命科学与医学工程系,
- 3. 北京师范大学低能核物理研究所,
- 折叠
摘要
Abstract
The maturation of low-cost silicon-on-insulation (SOI) MOSFET technology in the microwave domain has brought about a need to develop the specific characterization.The paper presents a method of abstaining from the scatter parameters of SOI MOSFET by resolving the Poisson equation,current equations and the telegraph equations of transmission lines of the input/output match networks.A numerical algorithm is used for the equation resolution.The input/output match circuits of MMIC can be designed and fabricated together with its active transistor,so that it shotens the fabrication period compared with the method of parameter abstraction when MMIC being developed.The numerical algorithm on the SOI MOSFET's scatter parameters has been carried out.It shows that the result from this method is identical with that from the parameter abstraction.关键词
SOI/散射矩阵/数值计算分类
信息技术与安全科学引用本文复制引用
齐臣杰,吴国华,王晓慧,李国辉,黄敞..微波晶体管散射矩阵的数值计算[J].半导体学报,2001,22(4):460-464,5.
