半导体学报2003，Vol.24Issue(5)：461-465,5.
薄膜SOI温度传感器中的少数载流子排斥效应
Minority-Carrier Exclusion Effect in Thin-Film SOI Temperature Sensor
摘要
Abstract
A silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate.The sensor has very promising characteristics.The maximum operating temperature can reach 550℃ even at a low current of 0.1mA.Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin,thus significantly raising the maximum operating temperature.Moreover,since the structure of the device on thin-film SOI wafer is not crucial in controlling the maximum operating temperature,device layout can be varied according to the requirements of applications.关键词
少数载流子排斥效应/高温传感器/扩展电阻/SOIKey words
minority-carrier exclusion effect/high temperature sensors/spreading resistance/SOI分类
信息技术与安全科学引用本文复制引用
李斌,黎沛涛,刘百勇,郑学仁..薄膜SOI温度传感器中的少数载流子排斥效应[J].半导体学报,2003,24(5):461-465,5.基金项目
香港大学CRCG和香港RGC(No.HKU7045/98E)资助项目 （No.HKU7045/98E）
