半导体学报2002，Vol.23Issue(5)：468-472,5.
1.25Gb/s InP基多量子阱激光器与HBT驱动电路的单片集成
A 1.25Gb/s InP-Based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver with a Lateral Buffer Mesa Structure
摘要
Abstract
A novel fabrication process related to a smoothly wet chemical etching profile of InP-based epitaxial layers in the crystal direction of [011] for an InP-based monolithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar transistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrated under a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 223-1.The integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.关键词
光发射/单片集成/光电集成电路Key words
integrated optoelectronics/optoelectronic integrated分类
信息技术与安全科学引用本文复制引用
李献杰,曾庆明,徐晓春,敖金平,赵方海,杨树人,柯锡明,王志功,刘式墉,梁春广..1.25Gb/s InP基多量子阱激光器与HBT驱动电路的单片集成[J].半导体学报,2002,23(5):468-472,5.基金项目
国家高技术研究发展计划资助项目(项目编号:863-307-15-3-04) （项目编号:863-307-15-3-04）
