人工晶体学报2005，Vol.34Issue(3)：471-474,4.
热丝辅助MW ECR CVD技术高速沉积高质量氢化非晶硅薄膜
High Quality a-Si:H Thin Films Deposited Using MW ECR CVD System Assisted by Hot Filament
摘要
Abstract
The hydrogenated amorphous silicon (a-Si:H)manufactured by plasma deposition techniques has been extensively investigated as a low-cost material used for solar cells production, during which its photovoltaic properties are strongly dependent on the H content and various H-Si bonding configurations closely related to the experiment parameters. In this study, samples are deposited using microwave electron cyclotron resonance chemical vapor deposition ( MW ECR CVD ) system assisted by hot filament. The parameters are adjusted to improve the deposition rate (DR) and photosensitivity ( σph/σD ) of a-Si:H thin films and infrared spectroscopy is utilized to determine the H content and H-Si configuration. It is suggested that in this system, the higher temperature caused by the energetic bombardment of ions and radiation of hot filament is, the higher value of σph/σD is obtained, and meanwhile the photo-electric properties of a-Si: H films are improved by chemical etching of weak Si-Si bonds when the H2 dilution ratio is increased for the last few minutes during the film deposition.关键词
氢化非晶硅/氢稀释率/电子回旋共振化学气相沉积/光敏性Key words
a-Si: H/H2 dilution ratio/ECR CVD/photosensitivity分类
信息技术与安全科学引用本文复制引用
周怀恩,陈光华,朱秀红,阴生毅,胡跃辉..热丝辅助MW ECR CVD技术高速沉积高质量氢化非晶硅薄膜[J].人工晶体学报,2005,34(3):471-474,4.基金项目
Project supported by State Development Program for Basic Research of China( G2000028201-1) （ G2000028201-1）
