半导体学报2008，Vol.29Issue(3)：473-477,5.
金刚石膜电化学清洗硅片表面有机沾污的研究
A Diamond Electrochemical Cleaning Technique for Organic Contaminants on Silicon Wafer Surfaces
张建新 1刘玉岭 1檀柏梅 1牛新环 1边永超 1高宝红 1黄妍妍1
作者信息
- 1. 河北工业大学微电子研究所,天津,300130
- 折叠
摘要
Abstract
Peroxodiphosphate anion (a powerful oxidant) can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxi-dation, decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique (DECT). The cleaning effects of DECT were compared with the RCA cleaning technique,including the silicon surface chemical composition that was observed with X-ray photoelectron spec- troscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon sur- face cleaned by DECT has slightly less organic residue and lower micro-roughness, so the new technique is more effective than the RCA cleaning technique.关键词
有机沾污/硅片表面清洗/掺硼金刚石膜电极/强氧化剂/微粗糙度/电化学清洗Key words
organic contaminations/ silicon wafer surface cleaning/ boron-doped diamond electrodes/ powerful oxidant/micro-roughness/ electrochemical cleaning分类
信息技术与安全科学引用本文复制引用
张建新,刘玉岭,檀柏梅,牛新环,边永超,高宝红,黄妍妍..金刚石膜电化学清洗硅片表面有机沾污的研究[J].半导体学报,2008,29(3):473-477,5.
