湖南大学学报（自然科学版）2009，Vol.36Issue(5)：47-50,4.
光敏BJMOSFET的物理模型及数值模拟
Physical Model and Numerical Simulation of Photo-BJMOSFET
摘要
Abstract
A novel structure of BJMOSFEU adding P+N injection on the Semiconductor on Insulator(SOI) film was developed.In this device, recombination of carriers was ingnored due to operating in depletion region.Its physical model was presented based on standard semiconductor equation.Numerical results indicate that the photon-generated electron and photon-generated hole are both the carriers in photo-BJMOSFET, thus it is more sensitive than the conventional MOS.It can also eliminate the big dark current of PN junction under CMOS technology, and is compatible with CMOS technology.关键词
光电晶体管/BJMOSFET/物理模型/数值模拟Key words
phototransitor/BJMOSFET/physical model/numerical simulation分类
信息技术与安全科学引用本文复制引用
曾云,谢海情,曾健平,张国梁,王太宏..光敏BJMOSFET的物理模型及数值模拟[J].湖南大学学报（自然科学版）,2009,36(5):47-50,4.基金项目
湖南省研究生科研创新项目资助和湖南省科技计划项目资助(2008FJ3123) （2008FJ3123）
