半导体学报2001，Vol.22Issue(4)：476-480,5.
0.1μm T型栅PHEMT器件
0.1μm T-Shaped Gate PHEMT Device
摘要
Abstract
PHEMT devices with T-shaped gate have been developed by using the mixed lithography—a new method combining the Electron Beam Lithography(EBL) with the normal contact lithography．The multilayer resist technique and different development are used to obtain a T-shaped gate structure．The fabrication technique and the device characteristics of the 0.1μm gate-length PHEMT have been studied，with good performance of PHEMT,690mS/mm gm and 93.97GHz ft achieved.关键词
二维电子气/电子束光刻/混合曝光/PHEMT/T型栅分类
信息技术与安全科学引用本文复制引用
郑英奎,刘明,和致经,吴德馨..0.1μm T型栅PHEMT器件[J].半导体学报,2001,22(4):476-480,5.
