发光学报2008，Vol.29Issue(3)：479-485,7.
Co掺杂ZnO薄膜的结构和磁学性能
Structural and Magnetic Properties of Co-doped ZnO Thin Films
摘要
Abstract
Co-doped ZnO films were fabricated using a pulsed laser deposition method on c-sapphire substrates. The structural and magnetic properties of the Co-doped ZnO films have been studied in this paper. The XRD characterization results show that they are wurtzite structures with the c-axes of the films aligning with those of the substrates. However the films do not grow along with the same orientation on the whole area of the specimens based on the HRTEM results. It is hard to conclude that the films were formed to be single crystals. The results reveal the occupation of Co ions at Zn sites in the host lattice. The studies of the electronic structures of the thin films show that the addition of Co ions into the Zn sites in the host ZnO affects the electronic band structure of the material. Magnetic hysteresis loops (M-H) were observed at room temperature, suggesting that the magnetism could be realized by Co-doping into ZnO. However, the improvement is limited. The work is following our previous reports on ZnO based diluted magnetic semiconductors, in which Co-doped ZnO thin films were synthesized using a dual-beam pulsed laser deposition method, suggesting their intrinsic mechanisms involved are probably similar.关键词
Co掺杂ZnO/稀磁半导体/脉冲激光沉积法/磁性Key words
Co-doped ZnO/diluted magnetic semiconductors/pulsed laser deposition/magnetic properties分类
数理科学引用本文复制引用
彭英姿,叶志高,叶志镇,汪友梅,朱丽萍..Co掺杂ZnO薄膜的结构和磁学性能[J].发光学报,2008,29(3):479-485,7.基金项目
杭州电子科技大学校科学研究基金( KYF091506003) （ KYF091506003）
浙江大学硅材料国家重点实验室开放基金(200603)资助项目.The project supported by Hangzhou Dianzi University Fund (KYF091506003) （200603）
State Key Laboratory of Silicon Materials, Zhejiang University(2000603). （2000603）
