半导体学报2007，Vol.28Issue(4)：484-489,6.
一种新颖的注入效率可控的门极可关断晶闸管的特性分析与优化
Analysis and Optimization of the Characteristics of a New IEC-GTO Thyristor
摘要
Abstract
Based on a short anode GTO structure (SA-GTO),a novel GTO structure called an injection efficiency controlled gate turn off thyristor (IEC-GTO) is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region. The forward blocking, conducting, and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO. The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics. Additionally, the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized,the process feasibility is analyzed, and a realization scheme is given. The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.关键词
电力半导体器件/门极可关断晶闸管/注入效率Key words
power semiconductor devices/gate turn-off thyristor/injection efficiency分类
信息技术与安全科学引用本文复制引用
王彩琳,高勇..一种新颖的注入效率可控的门极可关断晶闸管的特性分析与优化[J].半导体学报,2007,28(4):484-489,6.基金项目
西安理工大学优秀博士生科研基金和科研计划资助项目 Project supported by the Outstanding Doctor Research Foundation and Research Plan of Xi'an University of Technology （）
