液晶与显示2001，Vol.16Issue(1)：48-51,4.
p+-n--n结的势垒分布
Barrier Distribution of a p+-n--n Junction
摘要
Abstract
The improvement of the luminescent efficiency of GaP∶N green LEDdepends on optimization of the structural parameters. In this paper, according to the continuity of carrier profile, a method of calculating the carrier profile of a semiconductor n--n junction has been obtained, by solving the Poisson equation self-consistently. Based on this, and taking the potential drop within the n- region into account, the barrier distribution of a p+-n--n structure used in commercial light emitting diodes has been calculated, which prepared a necessary condition for optimizing the structural parameters.关键词
磷化镓/发光二极管/势垒分类
数理科学引用本文复制引用
赵普琴,杨锡震,李桂英,王亚非..p+-n--n结的势垒分布[J].液晶与显示,2001,16(1):48-51,4.基金项目
国家科委预研项目 （）
