半导体学报2009，Vol.30Issue(8)：4-9,6.DOI:10.1088/1674-4926/30/8/082001
Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure
Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure
摘要
Abstract
also indicate that scattering from half space phonon modes in the channel side plays a dominant role in mobility.关键词
hydrostatic pressure/strained AlN/GaN heterojunction/electronic mobility/optical-phonon scatteringKey words
hydrostatic pressure/strained AlN/GaN heterojunction/electronic mobility/optical-phonon scattering分类
信息技术与安全科学引用本文复制引用
Zhou Xiaojuan,Ban Shiliang..Influence of optical phonons on the electronic mobility in a strained wurtzite AlN/GaN heterojunction under hydrostatic pressure[J].半导体学报,2009,30(8):4-9,6.基金项目
Project supported by the National Natural Science Foundation of China (No. 60566002) and the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20070126001). （No. 60566002）
