发光学报2008，Vol.29Issue(3)：491-494,4.
在不同衬底温度下用直流反应磁控溅射法制备p型ZnO薄膜
The Investigation of Ellipsometry and DLTS Characteristic for the ZnO Films
摘要
Abstract
p-type ZnO thin films have been realized via co-doping of In and N by using dc reactive magnetron sputtering method. X-ray diffraction (XRD) measurement showed that all films possessed a good crystallinity with c-axis preferential orientation. The lowest reliable room-temperature resistivity was found to be 35.6 Ω·cm with carrier concentration of 1.57×1018 cm-3 and Hall mobility of 0.111 cm2·V-1·s-1. X-ray photo-electron spectroscopy confirms that In had been incorporated into the ZnO films effectively and the presence of In enhanced the incorporation of N. The transmittance spectrum revealed that the transmittance of all films was about 90% in the visible region.关键词
p型导电/In-N共掺/直流反应磁控溅射法/ZnO薄膜Key words
p-type conduction/In-N co-doped/dc reactive magnetron sputtering/ZnO film分类
数理科学引用本文复制引用
简二梅,叶志镇,刘暐昌,何海平,顾修全,朱丽萍,赵炳辉..在不同衬底温度下用直流反应磁控溅射法制备p型ZnO薄膜[J].发光学报,2008,29(3):491-494,4.基金项目
国家"973"计划(2006CB604906) （2006CB604906）
国家自然科学基金(50532060, 90601003)资助项目.The project supported by "973" Program of China (2006CB604906) （50532060, 90601003）
National Natural Science Foundation of China(50532060, 90601003) （50532060, 90601003）
