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两种集成高频CMOS多谐压控振荡器

张春晖 李永明 陈弘毅

半导体学报2001,Vol.22Issue(4):491-495,5.
半导体学报2001,Vol.22Issue(4):491-495,5.

两种集成高频CMOS多谐压控振荡器

Two Types of High Frequency Integrated CMOS Multivibrator Voltage-Controlled Oscillator

张春晖 1李永明 1陈弘毅1

作者信息

  • 1. 清华大学微电子学研究所,
  • 折叠

摘要

Abstract

Two types of Voltage-Controlled Oscillator (VCO) circuits,a differential oscillator and a simple ring one are described.Simulated in a 0.6μm CMOS technology offered by CSMC Company,the result of postsimulation exhibits that the maximum frequency of the simple ring VCO is more than 2GHz and 7.5mW power consumption (at supply voltage of 5V).The limitation of the maximum VCO frequency in specific technology is also discussed.

关键词

琐相环/CMOS振荡器/相位噪声/特征尺寸

分类

信息技术与安全科学

引用本文复制引用

张春晖,李永明,陈弘毅..两种集成高频CMOS多谐压控振荡器[J].半导体学报,2001,22(4):491-495,5.

半导体学报

OA北大核心CSCD

1674-4926

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