电子器件2007，Vol.30Issue(1)：49-53,5.
AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取
Parameter Extraction for Small Signal Equivalent Circuit of AlGaN/GaN High Electron Mobility Transistors
摘要
Abstract
Considering the peculiarities of AlGaN/GaN high electron mobility transistors (HEMTs), a model of extracting parasitic and intrinsic parameters for HEMT's small signal equivalent circuit is presented. The electrical parameters and S-parameters at 5～10 GHz for the AlGaN/GaN HEMT device have been extracted with this model. The calculated S-parameters match the measured data well. It is indicated that this model is simple and feasible.关键词
AlGaN/GaN HEMTs/小信号/参数提取Key words
AlGaN/GaN HEMTs/small signal/parameter extraction分类
信息技术与安全科学引用本文复制引用
常远程,张义门,张玉明,王超,曹全君..AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取[J].电子器件,2007,30(1):49-53,5.基金项目
国家基础科研项目(2002CB311904) （2002CB311904）
