半导体学报2004，Vol.25Issue(5)：502-507,6.
金属沾污对超薄栅氧(2.5nm)特性的影响
Effect of Metal Contamination on Characteristics of Ultra-Thin Gate Oxide
王刘坤 1Twan Bearda 2Karine Kenis 2Sophia Arnauts 2Patrick Van Doorne 2陈寿面 1Paul Mertens 2Marc Heyns2
作者信息
- 1. 上海集成电路研发中心,上海 201203
- 2. Interuniversity Microelectronics Center,Kapeldreef 75,B-3001 Leuven, Belgium
- 折叠
摘要
Abstract
The purpose of this work relates to study on the characteristics of ultra-thin gate oxide (2.5nm thickness) and the effect of metal Al,Zr,and Ta contamination on GOI.The controlled metallic contamination experiments are carried out by depositing a few ppm contaminated metal and low pH solutions on the wafers.The maximum metal surface concentration is controlled at about 1012cm-2 level in order to simulate metal contamination during ultra-clean processing.A ramped current stress for intrinsic charge-to-breakdown measurements with gate injection mode is used to examine the characteristics of these ultra-thin gate oxides and the effect of metal contamination on GOI.It is the first time to investigate the influence of metal Zr and Ta contamination on 2.5nm ultra-thin gate oxide.It is demonstrated that there is little effect of Al contamination on GOI,while Zr contamination is the most detrimental to GOI,and early breakdown has happened to wafers contaminated by Ta.关键词
栅氧完整性/金属沾污/本征电荷击穿/斜坡电流应力/MOS电容器Key words
gate oxide integrity/metal contamination/charge to breakdown/ramped current stress/MOS capacitor分类
信息技术与安全科学引用本文复制引用
王刘坤,Twan Bearda,Karine Kenis,Sophia Arnauts,Patrick Van Doorne,陈寿面,Paul Mertens,Marc Heyns..金属沾污对超薄栅氧(2.5nm)特性的影响[J].半导体学报,2004,25(5):502-507,6.
