人工晶体学报2004，Vol.33Issue(4)：510-515,6.
PVT法SiC单晶生长传热分析
A Heat Transfer Analysis for SiC Single Crystal Growth by PVT Method
摘要
Abstract
A heat transfer analysis for PVT growth of SiC was performed to optimize the growth conditions, aiming at obtaining better quality crystals. The analysis was focused on the heat transfer between the furnace lid and the crucible lid to which the seed was attached. It was found that the thermal shielding condition above the crucible lid, i.e. the hole shape and size in the graphite felt, plays an important role in determining the temperature uniformity on the crucible lid. The total radiation resistance and the heat transfer amount between the crucible lid and the furnace lid can be calculated using the simplified model presented in this paper for different positions of the crucible and different shapes and diameters of the hole in the graphite felt. The factors affecting the heat transfer amount between the crucible lid and the furnace lid were discussed. Besides, the feasibility of dynamic modification of the heat transfer conditions of the crucible lid was discussed.关键词
晶体生长/SiC/传热Key words
crystal growth/silicon carbide/heat transfer分类
数理科学引用本文复制引用
李河清,倪代秦,吴星,胡伯清,朱丽娜,陈小龙..PVT法SiC单晶生长传热分析[J].人工晶体学报,2004,33(4):510-515,6.基金项目
Project supported by the National Natural Science Foundation of China (No.50132040 （）
50302014) （）
