物理学报2001，Vol.50Issue(3)：512-516,5.
掺杂纳米硅薄膜中电子自旋共振研究
INVESTIGATIONS INTO ELECTRON SPIN RESONANCE IN DOPED NANOCRYSTALLINE SILICON FILMS
摘要
Abstract
We report here the studies of electron spin resonance (ESR) and its related defect states in doped nanocrystalline silicon films (nc-Si: H).The samples used,which was prepared by plasma enhanced CVD method,are of two phases in structure,i.e.,nanocrystallites embedded in the amorphous matrix.For phosphorus doped nc-Si:H samples,the measured ESR g-values are 1.9990—1.9991,the line width △Hpp(40—42) × 10-4 T,and the ESR density Nss is of order of 1017 cm-3.For boron doped nc-Si: H samples,the measured ESR g-values are 2.0076—2.0078,△Hpp is about 18×10-4 T,and Nss is of order of 1016 cm-3.Considering the micro-structural and conducting characteristics of these kinds of films,we discuss and give explanations to the ESR sources,their △Hpp and Nss as well.We ascribe the ESR signals in phosphorus doped nc-Si:H to the unpaired electrons in the high density defect states located in the interfaces of nanocrys tallites/amorphous matrix,and that in boron doped ones to the unpaired electrons in the valence band-tail states in the a Si:H tissue of their amorphous matrix.关键词
纳米硅薄膜/微结构/电子自旋共振分类
数理科学引用本文复制引用
刘湘娜,何宇亮,鲍希茂,徐刚毅,眭云霞..掺杂纳米硅薄膜中电子自旋共振研究[J].物理学报,2001,50(3):512-516,5.基金项目
国家自然科学基金(批准号：59832100和E020901)资助的课题. （批准号：59832100和E020901）
