半导体学报2007，Vol.28Issue(4)：514-517,4.
基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计
AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
摘要
Abstract
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120 μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency (PAE) of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.关键词
AlGaN/GaN HEMT/功率合成器/混合集成电路/微波功率放大器Key words
AlGaN/GaN HEMTs/power combining/MIC/power amplifiers分类
电子信息工程引用本文复制引用
姚小江,刘果果,刘新宇,李宾,陈延湖,陈小娟,魏珂,李诚瞻,罗卫军,王晓亮,刘丹..基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计[J].半导体学报,2007,28(4):514-517,4.基金项目
国家重点基础研究发展计划(批准号:2002CB311903)及中国科学院重点创新工程(批准号:KGCX2-SW-107)资助项目 Project supported by the State Key Development Program for Basic Research of China (No. 2002CB311903) and the Key Knowledge Innovation Program of the Chinese Academy of Sciences (No. KGCX2-SW-107) （批准号:2002CB311903）
