材料科学与工程学报2007，Vol.25Issue(4)：514-518,5.
液封浮区法生长GaAs晶体中的热应力
Thermal Stress in GaAs Crystal Grown by Liquid Encapsulant Float-zone Method
摘要
Abstract
The thermal stress calculation for a 3 inch diameter gallium arsenide crystal grown by liquid encapsulation full floating zone(LEFZ) method under microgravity has been conducted by using the finite element numerical method. The crystal is assumed to be in a pseudo-steady axisymmetric state and to behave as isotropic linearly elastic body. The effect of the thickness of the encapsulant and the rotation rate of crystal and feed rod on the thermal stress is analyzed.关键词
热应力/LEFZ法/GaAs晶体/微重力Key words
thermal stress/LEFZ method/GaAs crystal/microgravity分类
数理科学引用本文复制引用
刘春梅,李明伟,陈淑仙..液封浮区法生长GaAs晶体中的热应力[J].材料科学与工程学报,2007,25(4):514-518,5.基金项目
Supported by NSFC with Grant No. 50376078 （）
