电子器件2008，Vol.31Issue(1)：52-56,5.
应用于1.55 微米的高含氮量GaInNAs/GaAs单量子阱的光激反射和光激发光的研究
Photoreflectance and Photoluminescence Study of High Nitrogen Content GaInNAs/GaAs Single Quantum Well for 1.55 μm Applications
陈自雄 1苏国和 1HUNGC. T.1
作者信息
- 1. 台北技术与科学研究院,电子工程系,中国,台湾
- 折叠
摘要
Abstract
The optical properties of Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures have been studied using photoreflectance (PR) and photoluminescence (PL) measurements. In the PR spectra of single quantum well (SQW) samples, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the quantum well (QW) region have been ob-served. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization.The temperature dependence of the exciton transition energies have been studied in terms of both the Varshni and Bose-Einstein equations. The temperature dependence analysis yields information on the pa- rameters that describe the temperature variations of the interband transitions. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as origina-ting from the localized states as a result of nitrogen incorporation. The spectral features of these samples showed red shift with increasing N composition x. Another consequence of N-incorporation is the severe degradation of the crystal quality as evidenced by a significant increase in the temperature independent broadening parameter. In addition, introducing N into the system also resulted in an increase in the built-in electric field as determined from the observed FKOs above the GaAs band edge which tends to increase the overlap integrals of the higher excited states as well as partially screening out the modulating external field on the localized states at low temperature. The anomalous behavior of the temperature dependence of the PL peak energy and the full width at half maximum (FWHM) can be understood as a result of competition between the delocalized states and the localized states induced by N-incorporation.关键词
单量子井/光激反射/光激发光/Franz-Keldysh振动/FWHMKey words
Single quantum well (SQW) / Photoreflectance (PR) / Photoluminescence (PL)/Franz-Keldyshoscillations (FKOs) /Full width at half maximum (FWHM)分类
信息技术与安全科学引用本文复制引用
陈自雄,苏国和,HUNGC. T...应用于1.55 微米的高含氮量GaInNAs/GaAs单量子阱的光激反射和光激发光的研究[J].电子器件,2008,31(1):52-56,5.
