中国电子科技2005，Vol.3Issue(1)：52-56,5.
Band Structure Calculation of Si and Ge by Non-Local Empirical Pseudo-Potential Technique
Band Structure Calculation of Si and Ge by Non-Local Empirical Pseudo-Potential Technique
CHEN Yong 1RAVAIOLI Umberto2
作者信息
- 1. School of Microelectronics and Solid-State Electronics, UESTC Chengdu 610054 China
- 2. Beckman Institute, University oflllinois at Urbana-Champaign Urbana 61801 USA
- 折叠
摘要
Abstract
In this paper, the princ iple of spatial nonlocal empirical pseudopotential and its detailed calculation procedure is presented. Consequently, this technique is employed to calculate the band structuresof Silicon and Germaniun. By comparing the results with photoemission experimental data, the validity and accuracy of this calculation are fully conformed for valence or conductance band,respectively. Thus it can be concluded that the spin-orbit Hamiltonian will only affect the energy band gap and another conductance or valence band structure. Therefore, this nonlocal approach without spin-orbit part is adequate for the device simulation of only one carrier transport such as metal oxide semiconductor field effect transistors (MOSFET)'s, and it can significantly reduce the complication of band structure calculation.关键词
band structure/pseudo-potential/brillouin zone/Silicon/GermaniumKey words
band structure/pseudo-potential/brillouin zone/Silicon/Germanium分类
化学化工引用本文复制引用
CHEN Yong,RAVAIOLI Umberto..Band Structure Calculation of Si and Ge by Non-Local Empirical Pseudo-Potential Technique[J].中国电子科技,2005,3(1):52-56,5.
