半导体学报2009，Vol.30Issue(7)：52-59,8.DOI:10.1088/1674-4926/30/7/074005
Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion
Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion
摘要
Abstract
e LETth of a MBU in two SRAM cells and one DICE cell is also quantified. Besides charge sharing, the circuit response's temperature dependence also has a significant influence on the LETth.关键词
charge sharing/temperature dependence/parasitic bipolar/MBUKey words
charge sharing/temperature dependence/parasitic bipolar/MBU引用本文复制引用
Liu Biwei,Chen Shuming,Liang Bin..Temperature dependence of charge sharing and MBU sensitivity induced by a heavy ion[J].半导体学报,2009,30(7):52-59,8.基金项目
Project supported by the National Natural Science Foundation of China (No. 60836009) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20079998015). （No. 60836009）
