半导体学报2000，Vol.21Issue(6)：536-541,6.
A Novel Depletion-Mode MOS Gated Emitter Shorted Thyristor
A Novel Depletion-Mode MOS Gated Emitter Shorted Thyristor
张鹤鸣 1戴显英 1张义门 1马晓华 1林大松1
作者信息
- 1. Microelectronics Institute, Xidian University, Xi'an 710071, China
- 折叠
摘要
Abstract
A Novel MOS-gated thyristor, depletion-mode MOS gated emitter shorted thyristor (DMST),and its two structures are proposed. In DMST,the channel of depletion-mode MOS makes the thyristor emitter-based junction inherently short. The operation of the device is controlled by the interruption and recovery of the depletion-mode MOS P channel. The perfect properties have been demonstrated by 2-D numerical simulations and the tests on the fabricated chips.关键词
thyristor/MOS gateKey words
thyristor/MOS gate分类
信息技术与安全科学引用本文复制引用
张鹤鸣,戴显英,张义门,马晓华,林大松..A Novel Depletion-Mode MOS Gated Emitter Shorted Thyristor[J].半导体学报,2000,21(6):536-541,6.
