首页|期刊导航|哈尔滨工业大学学报(英文版)|Optical diode behavior of photonic crystal structure with asymmetric Kerr defect

Optical diode behavior of photonic crystal structure with asymmetric Kerr defectOA

Optical diode behavior of photonic crystal structure with asymmetric Kerr defect

中文摘要英文摘要

Optical diode behavior of asymmetric one-dimensional photonic crystal with Kerr defect is numerically investigated using nonlinear transfer matrix method. In the linear case, the intensity and the phase of transmitted field a…查看全部>>

Optical diode behavior of asymmetric one-dimensional photonic crystal with Kerr defect is numerically investigated using nonlinear transfer matrix method. In the linear case, the intensity and the phase of transmitted field are the same for the forward and backward operations. In the nonlinear case, however, the transmitted intensities are much different for the two operations, which display diode characteristic. Physical origin of the anisotropic transmissi…查看全部>>

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College of Information Science and Engineering, Yanshan University,Qinhuangdao 066004, China;Dept. of Applied Physics, Harbin Institute of Technology, Harbin 150001, China;Dept. of Applied Physics, Harbin Institute of Technology, Harbin 150001, China;Dept. of Applied Physics, Harbin Institute of Technology, Harbin 150001, China;Dept. of Applied Physics, Harbin Institute of Technology, Harbin 150001, China

数理科学

optical switching photonic band-gap materials Kerr effect

optical switching photonic band-gap materials Kerr effect

《哈尔滨工业大学学报(英文版)》 2007 (4)

545-547,3

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