人工晶体学报2004，Vol.33Issue(4)：549-552,4.
一个实用的生产用Ⅲ-Ⅴ族化合物半导体材料Turbo-Disc MOCVD生长模型
A Practical Ⅲ-Ⅴ Group Semiconductor Material Growth Model Concerning to the Mass Production in Turbo-Disc MOCVD Reactor
王浩 1廖常俊 1范广涵 1刘颂豪 1郑树文 1李述体 1郭志友 1孙慧卿 1陈贵楚 1陈炼辉 1吴文光 1李华兵1
作者信息
- 1. 华南师范大学信息光电子学院,广州,510631
- 折叠
摘要
Abstract
A practical Ⅲ-Ⅴ group semiconductor material growth model was obtained, when the Ⅲ-Ⅴ group materials growth was investigated under MOCVD mass flow control growth process. This model is based on the molecular dynamics and chemical kinetics, etc.The Turbo-Disc growth model was formalized specified after the Turbo-Disc heat and transfer flow model was applied in the boundary layer. The relation between the inlet reactant parameters(IPs) and the boundary layer growth parameters is directly connected in this growth model. This theoretical model was found to be useful in explaining the matched GaInP/GaAs , the ternary-alloy growth. The calculations are consistent with the GaInP/GaAs epitaxial experiment results. This model is very efficient for the mass production to get the matched ternary-alloy epitaxial layers.关键词
MOCVD/Turbo-Disc/生长动力学/GaInPKey words
MOCVD/Turbo-Disc/growth kinetics/GaInP分类
信息技术与安全科学引用本文复制引用
王浩,廖常俊,范广涵,刘颂豪,郑树文,李述体,郭志友,孙慧卿,陈贵楚,陈炼辉,吴文光,李华兵..一个实用的生产用Ⅲ-Ⅴ族化合物半导体材料Turbo-Disc MOCVD生长模型[J].人工晶体学报,2004,33(4):549-552,4.
