半导体学报2001，Vol.22Issue(5)：569-572,4.
InGaN光致发光性质与温度的关系
Dependence of InGaN Photoluminescence on Temperature
摘要
Abstract
The properties of photoluminescence (PL) of InGaN grown by metalorganic vapor phase epitaxy have been studied.It is found that the near-band-gap radiation wavelength shifts to the lower energy when the temperature increasing from 4.7K to 300K.The red-shift accords with the Varshni’s empirical equation on the whole.The temperature quenching has also been observed in the PL of InGaN,though it is much less than that of GaN.The possible reason that causes the quenching has been analyzed.关键词
InGaN/变温/光致发光分类
信息技术与安全科学引用本文复制引用
樊志军,刘祥林,万寿科,王占国..InGaN光致发光性质与温度的关系[J].半导体学报,2001,22(5):569-572,4.
