半导体学报2001，Vol.22Issue(5)：573-579,7.
刻划的富硅二氧化硅／p-Si结构的光致发光和电致发光
Photoluminescence and Electroluminescence from Scored Si-Rich SiO2 Film／p-Si Structure
孙永科 1崔晓明 1张伯蕊 1秦国刚 1马振昌 2宗婉华2
作者信息
- 1. 北京大学物理系,
- 2. 信息产业部第十三研究所
- 折叠
摘要
Abstract
The Si-rich SiO2／p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2／p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence（PL） spectrum is found quite different from that from the unscored one，which having been annealed in the same condition.The latter has only one PL band peaking at about 1.48eV，while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescence（EL）form the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.The EL spectrum of the unscored sample can be decompounded into two Gaussian luminescence bands with peaks at about 1.83eV and 2.23eV，while in that of the scored one，the intensity of the 1.83eV peak is enhanced significantly，and a new Gaussian band with peak at about 3.0eV appears.It is believed that the high defect-density region produced by the score provides the SiO2 layer with new luminescence centers and getters some impurities in it，as results in the change in EL and PL spectra.关键词
磁控溅射/光致发光/电致发光/高斯峰/密度缺陷区/发光中心/吸除作用分类
信息技术与安全科学引用本文复制引用
孙永科,崔晓明,张伯蕊,秦国刚,马振昌,宗婉华..刻划的富硅二氧化硅／p-Si结构的光致发光和电致发光[J].半导体学报,2001,22(5):573-579,7.
