电子器件2008，Vol.31Issue(1)：57-60,4.
预处理蓝宝石衬底上生长高质量 GaN 显示薄膜
High Quality GaN Display Films Growth on Pre-Treated Sapphire Substrate
摘要
Abstract
Etch pits on sapphire substrate surface are formed after surface treating. GaN films have been grown by LP-MOCVD on the sapphire substrate, which a half of it is pretreated by chemical etch. The crystal quality and optical quality of GaN films are analyzed by high-resolution double crystal X-ray rocking curve (XRC) and optical transmission measurement. These results indicate that the crystal quality of GaN determined by transmission measurement is in agreement with that determined by XRC, that the (0002)plane and (1012) plane full-width at half-maximum by XRC of GaN films grown on pre-treated sapphire substrate are as low as 208.80arcsec and 320. 76acrsec, respectively. The transmission spectrum of GaN is studied to assess the crystal and optical quality. The epilayer grown on pre-treated sapphire substrate ex-hibits excellent optical quality, in which the yellow luminescence (YL) is nearly invisible in the photolumi-nescence (PL) spectrum. The epilayer grown on the pre-treated sapphire substrate exhibits superior opti-cal properties and crystal properties, in which the higher transmission ratio and the greater modulation depth can be shown in the transmission spectrum.关键词
MOCVD/表面处理/GaN薄膜Key words
MOCVD/ surface treated/ GaN film分类
信息技术与安全科学引用本文复制引用
彭冬生,冯玉春,牛憨笨,刘晓峰..预处理蓝宝石衬底上生长高质量 GaN 显示薄膜[J].电子器件,2008,31(1):57-60,4.基金项目
广东省自然科学基金(04300863) （04300863）
广东省关键领域重点突破项目(282003A107) （282003A107）
深圳市科技计划项目(200515) （200515）
