吉林大学自然科学学报Issue(1)：57-60,4.
InAs/GaAs/InP及InAs/InP自组装量子点室温PL谱的研究
Analysis of Room Temperature PL Spectra of InAs/GaAs/InP and InAs/InP Self-assembled QDs: A Five-band Study
摘要
Abstract
In this paper, the room temperature PL spectra of InAs self-assembled dots grown on GaAs/InP and InP substrates are presented. For analyzing different positions of the PL peaks, we ex amined the strain tensor in these quantum dots using a valence force field model and used a five-band k · p formalism to find the electronic spectra. We found that the GaAs tensile-stained layer affects the position of the room temperature PL peak. The redshift of the PL peak of InAs/GaAs/InP QDs com pared to that of InAs/InP QDs is explained theoretically.关键词
量子点/应变/能带/PL谱分类
信息技术与安全科学引用本文复制引用
张冶金,王新强,陈维友,刘彩霞,汪爱军,杨树人,刘式墉..InAs/GaAs/InP及InAs/InP自组装量子点室温PL谱的研究[J].吉林大学自然科学学报,2001,(1):57-60,4.基金项目
国家自然科学基金(批准号：69937010)、国防科技重点实验室基金(批准号：99js36.2.1 jw1301)和吉林省青年基金(批准号：19990529-2). （批准号：69937010）
