电子器件2009，Vol.32Issue(3)：579-582,4.
采用0.18 μmCMOS工艺超宽带低噪声放大器的设计
Design of an Ultra-Wideband Low Noise Amplifier in a 0.18 μm CMOS
摘要
Abstract
This paper presents a 3.1～5.2 GHz ultra-wideband low noise amplifier (LNA) with a band-pass filter in the front of shunt feedback cascode topology fabricated in TSMC 0.18 μm CMOS process. More efforts are made on the wideband circuit and the choice of device in the high frequency. Consuming 27 mW from a 1.8 V power supply, simulation results show that S11 and S22 of circuit are lower than -14 dB, peak gain is 1.13 dB, flatness of gain is 15.92 dB and the noise figure of the LNA is from 1.84 dB to 2.11 dB over a full working band.关键词
超宽带/低噪声放大器/并联负反馈/并联峰化/切比雪夫滤波器Key words
ultra-wideband/LNA/shunt feedback/shunt-peak/Chebyshev filter分类
信息技术与安全科学引用本文复制引用
汪小军,黄风义,田昱,唐旭升,王勇..采用0.18 μmCMOS工艺超宽带低噪声放大器的设计[J].电子器件,2009,32(3):579-582,4.基金项目
国家自然科学基金资助(60771022) （60771022）
国家863计划资助(2007AA01Z2b1) （2007AA01Z2b1）
江苏省"六大人才高峰计划"资助(06-E-045) （06-E-045）
教育部博士点基金资助(20070286002)This work is supported in part by the National 863 project grant No. 2007AA01Z2b1, the NSF fund No. 60771022, Ph. D. Fund No. 20070286002 and The Summit of the "Six Great Talents" of Jiangsu Province No. 06-E-045. （20070286002）
