半导体学报2006，Vol.27Issue(1)：5-8,4.
Au/n-znO/p-Si结构的紫外增强型光电三极管的研制
Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor
摘要
Abstract
The fabrication and characterization of a Schottky-emitter heterojunction-collector UV-enhanced bipolar phototransistor (SHBT) are presented. The luminescence peak of the ZnO film is observed at 371nm in the PLspectrum. The sensitivity of the ultraviolet response from 200 to 400nm is enhanced noticeably, and the spectrum response at wavelengths longer than 400nm is also retained. The experiments show that the Au/n-ZnO/p-Si SHBT UV enhanced phototransistor enhances the sensitivity of the ultraviolet response noticeably. The UV response sensitivity at 370nm of the phototransistor is 5～10 times that of a ZnO/Si heterojunction UV enhanced photodiode.关键词
肖特基/异质结/宽带隙半导体ZnO/紫外光电三极管Key words
Schottky/heterojunction/WBG semiconductor ZnO/UV phototransistor分类
信息技术与安全科学引用本文复制引用
郭俊福,谢家纯,段理,何广宏,林碧霞,傅竹西..Au/n-znO/p-Si结构的紫外增强型光电三极管的研制[J].半导体学报,2006,27(1):5-8,4.基金项目
国家自然科学基金重大研究计划(批准号:90201038)和中国科学院知识创新工程(批准号:KJCX2-SW-04-02)资助项目 （批准号:90201038）
