发光学报2001，Vol.22Issue(z1)：5-9,5.
在6H-SiC衬底上用低压MOVPE法生长AlN和GaN的过程中用(AlN/GaN)多层缓冲层来控制残余应力
Residual Strain Control in AIN and GaN Epilayer Grown on 6H-SiC Substrate Using (GaN/AIN) Multi Buffer Layers by Low-pressure MOVPE
摘要
Abstract
BAlGaN quaternaries were proposed for use as light-emitting devices operating in the ultraviolet spectral region. GaN and AlN binaries seem to be the basic material for the device applications of the quaternary. A 6H-SiC substrate has an advantage in its small lattice mismatch to the nitrides and a thermal expansion coefficient of the SiC substrate is close to that of AlN. However, residual strain control of the AlN epitaxial layer is needed, because compressive strain, which was originated in the lattice mismatch to the substrate, was included in the AlN epitaxial layer directly grown on the SiC substrate. On the other hand, GaN epitaxial layer includes tensile strain, when the GaN is grown directly on the SiC substrate.The origin of the tensile strain is believed to be the larger thermal expansion coefficient of the GaN than that of the substrate. In this paper, effective control of the types and amount of the residual strain in the epitaxial layers are discussed for the 6H-SiC substrate. For this purpose, the (GaN/AlN) multi buffer structure is proposed as an effective tool for not only an AlN but also a GaN layer grown on the 6H-SiC substrate. Also we discuss the relationship between the residual strain and the crystalline quality for an AlN and a GaN epitaxial layer.关键词
残余应力控制/AlN和GaN外延层/(AlN/GaN)多缓冲层/低压MOVPE分类
信息技术与安全科学引用本文复制引用
Ishihara,Y,Kawanishi,H,Takano,T,Horie,M..在6H-SiC衬底上用低压MOVPE法生长AlN和GaN的过程中用(AlN/GaN)多层缓冲层来控制残余应力[J].发光学报,2001,22(z1):5-9,5.基金项目
Project supported by Grants-In Aid from the Ministry of Education, Science, Sports and Culture, and High-Tec Research Center in Private Universities. This work was carried out as a part of the "Research for Future”Program （）
