半导体学报2003，Vol.24Issue(6)：592-597,6.
一种采用局域注氧技术制备的新型DSOI器件
Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology
摘要
Abstract
To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.关键词
DSOI/SOI/局域注氧技术/自热效应/热阻Key words
SIMOX/MOS devices/silicon on insulator technology/floating-body effect分类
信息技术与安全科学引用本文复制引用
何平,江波,林曦,刘理天,田立林,李志坚,董业明,陈猛,王曦..一种采用局域注氧技术制备的新型DSOI器件[J].半导体学报,2003,24(6):592-597,6.基金项目
国家自然科学基金(批准号:59995550-1)和国家重点基础研究专项经费(编号:G2000036501)资助项目 （批准号:59995550-1）
