半导体学报2006，Vol.27Issue(4)：604-608,5.
弛豫时间对双势垒结构电子输运性质的影响
Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures
摘要
Abstract
Using a time-dependent quantum-kinetic simulation for the non-equilibrium electron transport properties of double-barrier devices, we have investigated and analyzed the effects of the relaxation time on electron transport properties in this kind of low dimensional structure. The results show that the relaxation time, which comes from the electron-phonon and electron-defect interactions,greatly affects the current-voltage curves,including the plateau-like gradient and hysteresis width of the current.关键词
非平衡/Wigner函数/电子输运Key words
non-equilibrium/Wigner function/electron transport分类
信息技术与安全科学引用本文复制引用
戴振宏,倪军..弛豫时间对双势垒结构电子输运性质的影响[J].半导体学报,2006,27(4):604-608,5.基金项目
国家重点基础发展规划(批准号:G2000067107)和国家自然科学基金(批准号:10404022)资助项目Project supported by the State Key Development Program for Basic Research of China(No.G2000067107) and the National Natural Science Foundation of China(No. 10404022) （批准号:G2000067107）
