中山大学学报(自然科学版)2003，Vol.42Issue(z1)：60-62,3.
Al2O3衬底上多晶硅薄膜的外延和区熔再结晶
Polycrystalline Silicon Thin Films on Al2O3 Substrates for Solar Cells
摘要
Abstract
In this paper, growth and recrystallization of silicon films on ceramic substrates were studied. Heavily doped polycrystalline silicon thin films were deposited on low cost Al2O3 by thermal rapid chemical vapor deposition (RTCVD). Compact and uniform films with grain size in the order of some micrometers were fabricated. By means of zone melting recrystallization (ZMR) method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer. The maximum grain of these films was about one millimeter in width and some millimeters in length, and hole mobility exceeded 50 cm2·V-1·s-1. Active silicon films deposited on these seeding layers showed the same morphologies. These results showed that these films have great potential for photovoltaic applications.关键词
多晶硅/薄膜/RTCVD/ZMR/氧化铝Key words
polycrystalline silicon/thin film/RTCVD/ZMR/Al2O3分类
信息技术与安全科学引用本文复制引用
励旭东,许颖,顾亚华,李艳,王文静,赵玉文..Al2O3衬底上多晶硅薄膜的外延和区熔再结晶[J].中山大学学报(自然科学版),2003,42(z1):60-62,3.基金项目
This work is supported by national natural science foundation of China. （）
