半导体学报2009，Vol.30Issue(5)：60-64,5.DOI:10.1088/1674-4926/30/5/055001
Annealing behavior of radiation damage in JFET-input operational amplifiers
Annealing behavior of radiation damage in JFET-input operational amplifiers
Zheng Yuzhan 1Lu Wu 2Ren Diyuan 1Wang Yiyuan 1Guo Qi 1Yu Xuefeng2
作者信息
- 1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
- 2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China
- 折叠
摘要
Abstract
The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High-and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.关键词
JFET-input operational amplifiers/dose rate/radiation damage/annealing behaviorKey words
JFET-input operational amplifiers/dose rate/radiation damage/annealing behavior分类
信息技术与安全科学引用本文复制引用
Zheng Yuzhan,Lu Wu,Ren Diyuan,Wang Yiyuan,Guo Qi,Yu Xuefeng..Annealing behavior of radiation damage in JFET-input operational amplifiers[J].半导体学报,2009,30(5):60-64,5.
