半导体学报2001，Vol.22Issue(5)：613-617,5.
碲镉汞的液相外延生长
Growth of HgCdTe by Liquid Phase Epitaxy
黄仕华 1何景福 2陈建才 2雷春红2
作者信息
- 1. 昆明理工大学理学院,
- 2. 昆明物理研究所,
- 折叠
摘要
Abstract
A novel graphite boat has been designed and an open-tube system for LPE growth with a mercury source been set up.With hydrogen as carrying gas,the mercury steam from a heating mercury source would compensate that volatilized from the growth liquid.Epitaxial films of HgCdTe with various values of x have been grown in Te-rich solution and on CdZnTe substrates using this system.By controlling the growth procedure,the morphology of HgCdTe epitaxial films is observed improved obviously,and remained melt on the surface of films has been reduced greatly.The constituent of epitaxial films is rather homogeneous with electrical characteristic improved obviously.The inter-diffusion between MCT epitaxial films and CdZnTe substrates is very little,and the crystal structure of MCT epitaxial films is perfect.关键词
碲镉汞/液相外延生长/开管液相外延系统/CdZnTe衬底分类
信息技术与安全科学引用本文复制引用
黄仕华,何景福,陈建才,雷春红..碲镉汞的液相外延生长[J].半导体学报,2001,22(5):613-617,5.
