半导体学报2006，Vol.27Issue(4)：613-622,10.
ZnO薄膜和量子阱的生长及光学特性
Growth and Optical Properties of ZnO Films and Quantum Wells
张保平 1康俊勇 2余金中 1王启明 1濑川勇三郎3
作者信息
- 1. 厦门大学物理系,厦门,361005
- 2. 独立行政法,人理化学研究所,仙台,980-0845,日本
- 3. 中国科学院半导体研究所,北京,100083
- 折叠
摘要
Abstract
The growth characteristics during metalorganic chemical vapor deposition and optical properties of ZnO films on sapphire (Al2O3) (0001) and (1120) substrates are studied. For the former,the effects of two important growth parameters,i. e. temperature and pressure,are investigated in detail. Due to the large lattice mismatch between the film and the substrate, ZnO nanocrystals are usually obtained. The growth behavior at the film-substrate interface is found to be strongly dependent on the growth temperature, while the growth pressure determines the shape of the nanostructures as they grow. It is difficult to obtain ZnO films that have good quality and a smooth surface simultaneously. Due to the smaller lattice mismatch,the critical thickness of ZnO on the Al2O3 (1120) surface is found to be much larger than that on the Al2O3 (0001) surface. ZnO/MgZnO quantum wells with graded well thicknesses are grown on the Al2O3 (1120) surfaces,and their optical properties are studied. The built-in electric field in the well layer, generated by the piezoelectric effect, is estimated to be 3 × 105 V/cm. It is found that growth at low temperatures and low pressures may facilitate the incorporation of acceptor impurities in ZnO.关键词
氧化锌/薄膜/量子阱/MOCVD/生长温度/掺杂Key words
ZnO/thin films/quantum well/MOCVD/growth temperature/doping分类
数理科学引用本文复制引用
张保平,康俊勇,余金中,王启明,濑川勇三郎..ZnO薄膜和量子阱的生长及光学特性[J].半导体学报,2006,27(4):613-622,10.
