半导体学报2007，Vol.28Issue(z1)：62-66,5.
温度对ULSI硅衬底化学机械抛光去除速率及动力学的控制
Control Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process
摘要
Abstract
The kinetics process and control process of chemical mechanical high precision finishing for material surfaces were studied. According to the experiments,the seven kinetics process for chemical mechanical polishing (CMP) was generalized. Through investigating the CMP process of ULSI silicon substrate, we found that the chemical process was the CMP control process under the same mechanical action condition, which was determined by temperature. The key factor influencing the chemical reactions was effectively settled,which will be advantageous for improving the CMP removal rate for other materials.关键词
化学机械抛光/动力学过程/控制过程/硅衬底/去除速率/抛光温度Key words
chemical mechanical polishing/kinetics process/control process/silicon substrate/removal rate/polishing temperature分类
信息技术与安全科学引用本文复制引用
刘玉岭,牛新环,檀柏梅,王胜利..温度对ULSI硅衬底化学机械抛光去除速率及动力学的控制[J].半导体学报,2007,28(z1):62-66,5.基金项目
天津市自然科学基金(批准号:043801211),高等学校博士学科专项科研基金(批准号:20050080007)及国家自然科学基金(批准号:10676008)资助项目Project supported by the Major Project of the Natural Science Foundation of Tianjin (No. 043801211),the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20050080007), and the National Natural Science Foundation of China (No. 10676008) （批准号:043801211）
