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Terahertz Semiconductor Quantum Well Devices

半导体学报2006，Vol.27Issue(4)：627-634,8.

Terahertz Semiconductor Quantum Well Devices

作者信息

1. Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;Institute for Microstructural Sciences,National Research Council,Ottawa K 1A 0R6,Canada;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA;Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics,Massachusetts Institute of Technology,Cambridge,Massachusetts 02139,USA
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摘要

Abstract

For eventually providing terahertz science with compact and convenient devices,terahertz (1～10THz) quantum-well photodetectors and quantum-cascade lasers are investigated. The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons. Background limited infrared performance (BLIP) operations are observed for all samples (three in total) ,designed for different wavelengths. BLIP temperatures of 17,13, and 12K are achieved for peak detection frequencies of 9.7THz(31μm) ,5.4THz(56μm) ,and 3.2THz(93μm) ,respectively. A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied. The δ-doping density for each period varies from 3.2 × 1010 to 4. 8 × 1010cm-2. We observe that the lasing threshold current density increases monotonically with doping concentration. Moreover, the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically. Interestingly the observed maximum lasing temperature is best at a doping density of 3.6 × 1010cm-2.

关键词

terahertz/quantum well photodetector/quantum-cascade laser

Key words

terahertz/quantum well photodetector/quantum-cascade laser

分类

信息技术与安全科学

引用本文复制引用

..Terahertz Semiconductor Quantum Well Devices[J].半导体学报,2006,27(4):627-634,8.

基金项目

Project supported by the NRC GHI Program, the National Fund for Distinguished Young Scholars of China(Nos. 60425415 and 60528005),the Major Project of the National Natural Science Foundation of China(No. 10390162) ,AFOSR,NASA,and NSF （Nos. 60425415 and 60528005）

半导体学报

OA北大核心CSCDCSTPCD

ISSN：1674-4926

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