半导体学报2008，Vol.29Issue(4)：628-636,9.
CMOS射频集成电路ESD保护的挑战
Emerging Challenges in ESD Protection for RF ICs in CMOS
摘要
Abstract
On-chip electrostatic discharge (ESD) protection design has become an emerging challenge for radio-frequency(RF) integrated circuits (IC) design as IC technologies migrate into the very-deep-sub-micron (VDSM) regime and RFICs move into multi-GHz operations. The key problem originates from the complex interaction between the ESD protec-tion circuitry and the core RF IC circuit under protection. This paper discusses the recent development in RF ESD protec-tion research and design,outlining emerging challenges,new design methods,and novel RF ESD protection solutions.关键词
静电泄放/ESD保护/射频ESD/寄生效应Key words
electrostatic discharge/ ESD protection/ RF ESD/ parasitic分类
信息技术与安全科学引用本文复制引用
王自惠,林琳,王昕,刘海南,周玉梅..CMOS射频集成电路ESD保护的挑战[J].半导体学报,2008,29(4):628-636,9.基金项目
国家自然科学基金和CitrusCom Semiconductor资助项目 （）
Project supported by the National Natural Science Foundation of China and CitrusCom Semiconductor （）
