电子器件2004，Vol.27Issue(1)：63-65,82,4.
钌基厚膜应变电阻力敏模型的初始讨论
Inchoate Discussion of Ru-Based Thick Film Strain Resistor′s Strain Sensitive Model
摘要
Abstract
We constructed a strain sensitive model through the analysis of the Ru-based thick film strain resistor' s tunneling barrier model. Bi2Ru2O7 was synthesized with Bi2O3 and RuO2. The gauge factor (GF) aggrandizes with the conductive particles radius' accretion. We interpreted this phenomenon through the strain sensitive model, and explained the other strain sensitive phenomenon, such as the GF mounts up with the barrier height' s augmention.关键词
厚膜应变电阻/力阻模型/隧道势垒模型Key words
thick film strain resistor/strain sensitive model/tunneling barrier model分类
信息技术与安全科学引用本文复制引用
丁鹏,马以武..钌基厚膜应变电阻力敏模型的初始讨论[J].电子器件,2004,27(1):63-65,82,4.基金项目
The project is supported by NSFC,granted.(NO.60175927,60374050) （NO.60175927,60374050）
