半导体学报2004，Vol.25Issue(6)：639-644,6.
单晶纳米硅薄膜的制备及其场发射特性
Fabrication and Field Emission of Silicon Nano-Crystalline Film
摘要
Abstract
The silicon nano-crystalline (nc-Si) film is fabricated on 〈100〉 orientation,0.01Ω*cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm2 of current density,which is close to carbon nanotube film's.关键词
单晶纳米硅/阳极腐蚀/晶向一致/场发射Key words
nc-Si/anodic etching/uniform orientation/field emission分类
信息技术与安全科学引用本文复制引用
王伟明,郁可,丁艳芳,李琼,朱自强..单晶纳米硅薄膜的制备及其场发射特性[J].半导体学报,2004,25(6):639-644,6.基金项目
国家自然科学基金资助项目(批准号:10374027,69925409) （批准号:10374027,69925409）
