半导体学报2005，Vol.26Issue(4)：641-644,4.
UV/UHV/CVD生长应变Si1-xGex层
Growth of Strained Si1-xGex Layer by UV/UHV/CVD
摘要
Abstract
Strained Si1-xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃ ,respectively. At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently. The strained Si1-x Gex and multilayer Si1-x Gex/Si structures are examined by X-ray diffraction, SMIS, etc. , and it is found that the materials have good crystallinity and the rising and falling edges are steep. The technique has a capability of growing high-quality Si1-xGex/Si strained layers.关键词
Si1-xGex/超高真空/紫外光/化学气相淀积Key words
Si1-xGex/ultrahigh vacuum/ultraviolet light/chemical vapor deposition分类
信息技术与安全科学引用本文复制引用
胡辉勇,张鹤鸣,戴显英,李开成,王伟,朱永刚,王顺祥,崔晓英,王喜媛..UV/UHV/CVD生长应变Si1-xGex层[J].半导体学报,2005,26(4):641-644,4.基金项目
国家部委预研基金(批准号:41308060108)和模拟集成电路国家重点实验室基金(批准号:51439010101DZ01)资助项目 （批准号:41308060108）
